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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    CSD75205W1015

    CSD75205W1015

    MOSFET 2P-CH 20V 1.2A 6DSBGA

    Texas Instruments

    4,552
    RFQ
    CSD75205W1015

    Tabla de datos

    NexFET™ 6-UFBGA, DSBGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1.2A 120mOhm @ 1A, 4.5V 850mV @ 250µA 2.2nC @ 4.5V 265pF @ 10V 750mW -55°C ~ 150°C (TJ) - - Surface Mount 6-DSBGA (1x1.5)
    SI4910DY-T1-GE3

    SI4910DY-T1-GE3

    MOSFET 2N-CH 40V 7.6A 8SOIC

    Vishay Siliconix

    4,752
    RFQ
    SI4910DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 7.6A 27mOhm @ 6A, 10V 2V @ 250µA 32nC @ 10V 855pF @ 20V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRF9389TR

    IRF9389TR

    MOSFET N/P-CH 30V 6.8A 8SOP

    UMW

    2,103
    RFQ
    IRF9389TR

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Active MOSFET (Metal Oxide) N and P-Channel - 30V 6.8A (Ta), 4.6A (Ta) 27mOhm @ 6.8A, 10V, 64mOhm @ 4.6A, 10V 2.3V @ 10µA 14nC @ 10V, 16nC @ 10V 398pF @ 15V, 383pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    IRF7331TRPBF

    IRF7331TRPBF

    MOSFET 2N-CH 20V 7A 8SO

    Infineon Technologies

    3,261
    RFQ
    IRF7331TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7A 30mOhm @ 7A, 4.5V 1.2V @ 250µA 20nC @ 4.5V 1340pF @ 16V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDW2508PB

    FDW2508PB

    MOSFET 2P-CH 12V 6A 8TSSOP

    onsemi

    4,997
    RFQ
    FDW2508PB

    Tabla de datos

    PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 6A 18mOhm @ 6A, 4.5V 1.5V @ 250µA 45nC @ 4.5V 3775pF @ 6V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SIA511DJ-T1-GE3

    SIA511DJ-T1-GE3

    MOSFET N/P-CH 12V 4.5A PPAK8X8

    Vishay Siliconix

    4,200
    RFQ

    -

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 12V 4.5A 40mOhm @ 4.2A, 4.5V 1V @ 250µA 12nC @ 8V 400pF @ 6V 6.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    PJL9812_R2_00001

    PJL9812_R2_00001

    MOSFET 2N-CH 30V 6A 8SOP

    Panjit International Inc.

    4,008
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6A (Ta) 35mOhm @ 6A, 10V 1.3V @ 250µA 5.1nC @ 4.5V 421pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    IRF7311TR

    IRF7311TR

    MOSFET 2N-CH 20V 6.6A 8SO

    Infineon Technologies

    2,442
    RFQ
    IRF7311TR

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6.6A 29mOhm @ 6A, 4.5V 700mV @ 250µA 27nC @ 4.5V 900pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDS9953A

    FDS9953A

    MOSFET 2P-CH 30V 2.9A 8SOIC

    onsemi

    4,187
    RFQ
    FDS9953A

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 2.9A 130mOhm @ 1A, 10V 3V @ 250µA 3.5nC @ 10V 185pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIA912DJ-T1-GE3

    SIA912DJ-T1-GE3

    MOSFET 2N-CH 12V 4.5A PPAK8X8

    Vishay Siliconix

    2,607
    RFQ

    -

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 12V 4.5A 40mOhm @ 4.2A, 4.5V 1V @ 250µA 11.5nC @ 8V 400pF @ 6V 6.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    TSM085NB03DCR

    TSM085NB03DCR

    MOSFET 2N-CH 30V 12A 8PDFNU

    Taiwan Semiconductor Corporation

    4,477
    RFQ

    -

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A (Ta), 51A (Tc) 8.5mOhm @ 12A, 10V 2.5V @ 250µA 20nC @ 10V 1091pF @ 15V 2W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    TSM300NB06LDCR

    TSM300NB06LDCR

    MOSFET 2N-CH 60V 5A 8PDFNU

    Taiwan Semiconductor Corporation

    3,562
    RFQ

    -

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 5A (Ta), 24A (Tc) 30mOhm @ 5A, 10V 2.5V @ 250µA 17nC @ 10V 966pF @ 30V 2W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    IRF7501TRPBF

    IRF7501TRPBF

    MOSFET 2N-CH 20V 2.4A MICRO8

    Infineon Technologies

    2,379
    RFQ
    IRF7501TRPBF

    Tabla de datos

    HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 2.4A 135mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
    PMWD16UN,518

    PMWD16UN,518

    MOSFET 2N-CH 20V 9.9A 8TSSOP

    NXP USA Inc.

    2,212
    RFQ
    PMWD16UN,518

    Tabla de datos

    TrenchMOS™ 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 9.9A 19mOhm @ 3.5A, 4.5V 700mV @ 1mA 23.6nC @ 4.5V 1366pF @ 16V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SI4804BDY-T1-E3

    SI4804BDY-T1-E3

    MOSFET 2N-CH 30V 5.7A 8SOIC

    Vishay Siliconix

    4,922
    RFQ
    SI4804BDY-T1-E3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 22mOhm @ 7.5A, 10V 3V @ 250µA 11nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SI9934BDY-T1-E3

    SI9934BDY-T1-E3

    MOSFET 2P-CH 12V 4.8A 8SOIC

    Vishay Siliconix

    3,973
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 4.8A 35mOhm @ 6.4A, 4.5V 1.4V @ 250µA 20nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDZ1905PZ

    FDZ1905PZ

    MOSFET 2P-CH 6WLCSP

    onsemi

    3,097
    RFQ
    FDZ1905PZ

    Tabla de datos

    PowerTrench® 6-UFBGA, WLCSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate - - 126mOhm @ 1A, 4.5V 1V @ 250µA - - 900mW -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1x1.5)
    SI9934BDY-T1-GE3

    SI9934BDY-T1-GE3

    MOSFET 2P-CH 12V 4.8A 8SOIC

    Vishay Siliconix

    4,570
    RFQ

    -

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 4.8A 35mOhm @ 6.4A, 4.5V 1.4V @ 250µA 20nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CTLDM303N-M832DS TR

    CTLDM303N-M832DS TR

    MOSFET 2N-CH 30V 3.6A TLM832DS

    Central Semiconductor Corp

    2,553
    RFQ
    CTLDM303N-M832DS TR

    Tabla de datos

    - 8-TDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 3.6A 40mOhm @ 1.8A, 4.5V 1.2V @ 250µA 13nC @ 4.5V 590pF @ 10V 1.65W -55°C ~ 150°C (TJ) - - Surface Mount TLM832DS
    IRFI4212H-117P

    IRFI4212H-117P

    MOSFET 2N-CH 100V 11A TO220-5

    Infineon Technologies

    3,061
    RFQ
    IRFI4212H-117P

    Tabla de datos

    - TO-220-5 Full Pack Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 11A 72.5mOhm @ 6.6A, 10V 5V @ 250µA 18nC @ 10V 490pF @ 50V 18W -55°C ~ 150°C (TJ) - - Through Hole TO-220-5 Full-Pak
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