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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    OP526,005

    OP526,005

    MOSFET

    WeEn Semiconductors

    2,142
    RFQ

    -

    * - Tray Active - - - - - - - - - - - - - - -
    SI5905BDC-T1-E3

    SI5905BDC-T1-E3

    MOSFET 2P-CH 8V 4A 1206-8

    Vishay Siliconix

    3,250
    RFQ
    SI5905BDC-T1-E3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 80mOhm @ 3.3A, 4.5V 1V @ 250µA 11nC @ 8V 350pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5905BDC-T1-GE3

    SI5905BDC-T1-GE3

    MOSFET 2P-CH 8V 4A 1206-8

    Vishay Siliconix

    4,827
    RFQ
    SI5905BDC-T1-GE3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 80mOhm @ 3.3A, 4.5V 1V @ 250µA 11nC @ 8V 350pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5915BDC-T1-E3

    SI5915BDC-T1-E3

    MOSFET 2P-CH 8V 4A 1206-8

    Vishay Siliconix

    3,381
    RFQ
    SI5915BDC-T1-E3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 70mOhm @ 3.3A, 4.5V 1V @ 250µA 14nC @ 8V 420pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    SI5915BDC-T1-GE3

    SI5915BDC-T1-GE3

    MOSFET 2P-CH 8V 4A 1206-8

    Vishay Siliconix

    3,426
    RFQ
    SI5915BDC-T1-GE3

    Tabla de datos

    TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 70mOhm @ 3.3A, 4.5V 1V @ 250µA 14nC @ 8V 420pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
    DMN3022LDG-7

    DMN3022LDG-7

    MOSFET 2N-CH 30V 7.6A PWRDI3333

    Diodes Incorporated

    4,988
    RFQ
    DMN3022LDG-7

    Tabla de datos

    - 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 7.6A (Ta), 15A (Tc) 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V 2.1V @ 250µA, 1.2V @ 250µA 3.7nC @ 4.5V, 8nC @ 4.5V 481pF @ 15V, 996pF @ 15V 1.96W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type D)
    DMN3022LFG-7

    DMN3022LFG-7

    MOSFET 2N-CH 30V 7.6A PWRDI3333

    Diodes Incorporated

    3,657
    RFQ
    DMN3022LFG-7

    Tabla de datos

    - 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 7.6A (Ta), 15A (Tc) 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V 2.1V @ 250µA, 1.2V @ 250µA 3.7nC @ 4.5V, 8nC @ 4.5V 481pF @ 15V, 996pF @ 15V 1.96W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type D)
    SH8K12TB1

    SH8K12TB1

    MOSFET 2N-CH 30V 5A 8SOP

    Rohm Semiconductor

    4,324
    RFQ
    SH8K12TB1

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5A 42mOhm @ 5A, 10V 2.5V @ 1mA 4nC @ 5V 250pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    DMTH10H038SPDWQ-13

    DMTH10H038SPDWQ-13

    MOSFET 2N-CH 100V 25A PWRDI50

    Diodes Incorporated

    2,649
    RFQ
    DMTH10H038SPDWQ-13

    Tabla de datos

    - 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 25A (Tc) 33mOhm @ 10A, 10V 4V @ 250µA 8nC @ 10V 544pF @ 50V 2.7W (Ta), 39W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type UXD)
    ZXMN3A06DN8TC

    ZXMN3A06DN8TC

    MOSFET 2N-CH 30V 4.9A 8SO

    Diodes Incorporated

    4,275
    RFQ
    ZXMN3A06DN8TC

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    DMTH10H032LPDWQ-13

    DMTH10H032LPDWQ-13

    MOSFET 2N-CH 100V 24A PWRDI50

    Diodes Incorporated

    2,424
    RFQ
    DMTH10H032LPDWQ-13

    Tabla de datos

    - 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 24A (Tc) 32mOhm @ 5A, 10V 2.5V @ 250µA 11.9nC @ 10V 683pF @ 50V 3W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type UXD)
    ZXMN3AM832TA

    ZXMN3AM832TA

    MOSFET 2N-CH 30V 2.9A 8MLP

    Diodes Incorporated

    54
    RFQ
    ZXMN3AM832TA

    Tabla de datos

    * - Cut Tape (CT) Active - - - - - - - - - - - - - - -
    FDG6316P

    FDG6316P

    MOSFET 2P-CH 12V 0.7A SC88

    onsemi

    3,297
    RFQ
    FDG6316P

    Tabla de datos

    PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 700mA 270mOhm @ 700mA, 4.5V 1.5V @ 250µA 2.4nC @ 4.5V 146pF @ 6V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
    SSM6N7002BFU(T5L,F

    SSM6N7002BFU(T5L,F

    MOSFET 2N-CH 60V 0.2A US6

    Toshiba Semiconductor and Storage

    4,211
    RFQ
    SSM6N7002BFU(T5L,F

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - 17pF @ 25V 300mW 150°C (TJ) - - Surface Mount US6
    2N7002KDWA-TP

    2N7002KDWA-TP

    MOSFET 2N-CH 60V 0.34A SOT363

    Micro Commercial Co

    3,166
    RFQ
    2N7002KDWA-TP

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 340mA 5Ohm @ 500mA, 10V 2.5V @ 1mA - 40pF @ 10V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    BSO612CVGHUMA1

    BSO612CVGHUMA1

    MOSFET N/P-CH 60V 3A/2A 8DSO

    Infineon Technologies

    4,196
    RFQ
    BSO612CVGHUMA1

    Tabla de datos

    SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 60V 3A, 2A 120mOhm @ 3A, 10V 4V @ 20µA 15.5nC @ 10V 340pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    BSO615NGHUMA1

    BSO615NGHUMA1

    MOSFET 2N-CH 60V 2.6A 8DSO

    Infineon Technologies

    3,480
    RFQ
    BSO615NGHUMA1

    Tabla de datos

    SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 2.6A 150mOhm @ 2.6A, 4.5V 2V @ 20µA 20nC @ 10V 380pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    DMN13M9UCA6-7

    DMN13M9UCA6-7

    MOSFET 2N-CH X3-DSN3518-6

    Diodes Incorporated

    2,812
    RFQ
    DMN13M9UCA6-7

    Tabla de datos

    - 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - - - 1.3V @ 1mA 56.5nC @ 4.5V 3315pF @ 6V 2.67W -55°C ~ 150°C (TJ) - - Surface Mount X3-DSN3518-6
    AONP36320

    AONP36320

    MOSFET 2N-CH 30V 26A 8DFN

    Alpha & Omega Semiconductor Inc.

    4,624
    RFQ
    AONP36320

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 30V 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc) 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V 2.1V @ 250µA 40nC @ 10V 1700pF @ 15V, 1650pF @ 15V 3.3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (3.3x3.3)
    FDC6432SH

    FDC6432SH

    MOSFET N/P-CH 30V/12V 2.4A SSOT6

    onsemi

    3,681
    RFQ
    FDC6432SH

    Tabla de datos

    PowerTrench®, SyncFET™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 12V 2.4A, 2.5A 90mOhm @ 2.4A, 10V 3V @ 1mA 3.5nC @ 5V 270pF @ 15V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
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