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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NVMJD036N10MCLTWG

    NVMJD036N10MCLTWG

    MOSFET - POWER, DUAL, N-CHANNEL,

    onsemi

    3,012
    RFQ
    NVMJD036N10MCLTWG

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel - 100V 6.3A (Ta), 21A (Tc) 36mOhm @ 5A, 10V 3V @ 26µA 7.4nC @ 10V 496pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    NIMD6001NR2G

    NIMD6001NR2G

    MOSFET DRIVER 60 V, 3.3 A 130 MO

    onsemi

    2,688
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel - 60V 3.3A (Tj) 110mOhm @ 3.3A, 10V 3V @ 250µA 9nC @ 5V 175pF @ 15V - -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    NVMFWD027N10MCLT1G

    NVMFWD027N10MCLT1G

    DUAL N-CHANNEL POWER MOSFET100 V

    onsemi

    2,403
    RFQ
    NVMFWD027N10MCLT1G

    Tabla de datos

    - 8-PowerTDFN Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel - 100V 7.4A (Ta), 28A (Tc) 26mOhm @ 7A, 10V 3V @ 38µA 11nC @ 10V 720pF @ 50V 3.1W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    FDMA3027PZ-F130

    FDMA3027PZ-F130

    DUAL P-CHANNEL POWERTRENCH MOSFE

    onsemi

    4,953
    RFQ
    FDMA3027PZ-F130

    Tabla de datos

    PowerTrench® 6-WDFN Exposed Pad Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel Logic Level Gate 30V 3.3A 87mOhm @ 3.3A, 10V 3V @ 250µA 10nC @ 10V 435pF @ 15V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
    NTMFD5877NLT1G

    NTMFD5877NLT1G

    POWER MOSFET, DUAL N-CHANNEL, LO

    onsemi

    3,555
    RFQ
    NTMFD5877NLT1G

    Tabla de datos

    - 8-PowerTDFN Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 60V 17A (Ta) 39mOhm @ 7.5A, 10V 3V @ 250µA 5.9nC @ 4.5V 540pF @ 25V 3.2W (Ta), 23W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    FDS6910-Z

    FDS6910-Z

    DUAL N-CHANNEL LOGIC LEVEL POWER

    onsemi

    3,915
    RFQ
    FDS6910-Z

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 30V 7.5A (Ta) 13mOhm @ 7.5A, 10V 3V @ 250µA 24nC @ 10V 1130pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NVMFD5873NLWFT1G-UM

    NVMFD5873NLWFT1G-UM

    POWER MOSFET 60V, 58A, 13 MOHM,

    onsemi

    3,909
    RFQ
    NVMFD5873NLWFT1G-UM

    Tabla de datos

    - 8-PowerTDFN Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel - 60V 58A - - - - - - Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    NTTFD1D8N02P1E

    NTTFD1D8N02P1E

    MOSFET, POWER, 25V DUAL N-CHANNE

    onsemi

    2,801
    RFQ
    NTTFD1D8N02P1E

    Tabla de datos

    PowerTrench® 8-PowerWDFN Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 25V 11A (Ta), 21A (Ta) 4.2mOhm @ 15A, 10V, 1.4mOhm @ 29A, 10V 2V @ 190µA, 2V @ 310µA 5.5nC @ 4.5V, 17nC @ 4.5V 873pF @ 15V, 2700pF @ 15V 800mW (Ta), 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (3.3x3.3)
    NXH015F120M3F1PTG

    NXH015F120M3F1PTG

    SILICON CARBIDE (SIC) MODULE ELI

    onsemi

    3,278
    RFQ
    NXH015F120M3F1PTG

    Tabla de datos

    - Module Bulk Discontinued at Digi-Key SiCFET (Silicon Carbide) 4 N-Channel (Full Bridge) Depletion Mode 1200V (1.2kV) 77A (Tc) 19mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
    FDPC1012S-P

    FDPC1012S-P

    POWERTRENCH POWER CLIP 25V ASYME

    onsemi

    2,988
    RFQ
    FDPC1012S-P

    Tabla de datos

    PowerTrench® 8-PowerWDFN Bulk Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel - 25V 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V 2.2V @ 250µA, 2.2V @ 1mA 8nC @ 4.5V, 25nC @ 4.5V 1075pF @ 13V, 3456pF @ 13V 1.6W (Ta), 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Powerclip-33
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