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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF8910TRPBFXTMA1

    IRF8910TRPBFXTMA1

    MOSFET 2N-CH 20V 10A 8DSO-902

    Infineon Technologies

    3,993
    RFQ
    IRF8910TRPBFXTMA1

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel - 20V 10A (Ta) 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-902
    SI4936BDY-T1-E3

    SI4936BDY-T1-E3

    MOSFET 2N-CH 30V 6.9A 8SOIC

    Vishay Siliconix

    119
    RFQ
    SI4936BDY-T1-E3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.9A 35mOhm @ 5.9A, 10V 3V @ 250µA 15nC @ 10V 530pF @ 15V 2.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    RJK03P7DPA-00#J5A

    RJK03P7DPA-00#J5A

    MOSFET 2N-CH 30V 15A/30A 8WPAK

    Renesas Electronics Corporation

    24,000
    RFQ
    RJK03P7DPA-00#J5A

    Tabla de datos

    - 8-WFDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate, 4.5V Drive 30V 15A, 30A 9.4mOhm @ 7.5A, 10V - 7.1nC @ 4.5V 1190pF @ 10V 10W, 20W 150°C (TJ) - - Surface Mount 8-WPAK
    RJK03P9DPA-00#J5A

    RJK03P9DPA-00#J5A

    MOSFET 2N-CH 30V 20A/50A 8WPAK

    Renesas Electronics Corporation

    24,000
    RFQ
    RJK03P9DPA-00#J5A

    Tabla de datos

    - 8-WFDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate, 4.5V Drive 30V 20A, 50A 7mOhm @ 10A, 10V - 7.7nC @ 4.5V 1660pF @ 10V 15W, 35W 150°C (TJ) - - Surface Mount 8-WPAK
    G130N06S2

    G130N06S2

    MOSFET 2N-CH 60V 9A 8SOP

    Goford Semiconductor

    3,701
    RFQ
    G130N06S2

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 9A (Tc) 15mOhm @ 10A, 10V 2.5V @ 250µA 67nC @ 10V 3021pF @ 30V 2.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    FDMS3686S

    FDMS3686S

    MOSFET 2N-CH 30V 13A/23A POWER56

    onsemi

    3,644
    RFQ
    FDMS3686S

    Tabla de datos

    PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 23A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1785pF @ 10V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
    SI3900DV-T1-GE3

    SI3900DV-T1-GE3

    MOSFET 2N-CH 20V 2A 6TSOP

    Vishay Siliconix

    6,716
    RFQ
    SI3900DV-T1-GE3

    Tabla de datos

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 2A 125mOhm @ 2.4A, 4.5V 1.5V @ 250µA 4nC @ 4.5V - 830mW -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    FCP11N65

    FCP11N65

    MOSFET N-CH

    Fairchild Semiconductor

    3,093
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    RFIS40N10LE

    RFIS40N10LE

    MOSFET N-CH 100V 40A

    Harris Corporation

    800
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FDS6984S

    FDS6984S

    MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

    Fairchild Semiconductor

    113,328
    RFQ
    FDS6984S

    Tabla de datos

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.5A, 8.5A 19mOhm @ 8.5A, 10V 3V @ 250µA 12nC @ 5V 1233pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    TSM6963SDCA RVG

    TSM6963SDCA RVG

    MOSFET 2P-CH 20V 4.5A 8TSSOP

    Taiwan Semiconductor Corporation

    66,807
    RFQ

    -

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 4.5A (Tc) 30mOhm @ 4.5A, 4.5V 1V @ 250µA 20nC @ 4.5V 1500pF @ 10V 1.14W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    FDR8508P

    FDR8508P

    MOSFET 2P-CH 30V 3A SUPERSOT-8

    Fairchild Semiconductor

    21,815
    RFQ
    FDR8508P

    Tabla de datos

    PowerTrench® 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 3A 52mOhm @ 3A, 10V 3V @ 250µA 12nC @ 5V 750pF @ 15V 800mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
    IRF8910TRPBF

    IRF8910TRPBF

    MOSFET 2N-CH 20V 10A 8SO

    Infineon Technologies

    7,440
    RFQ
    IRF8910TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 10A 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    RFIS30P06

    RFIS30P06

    MOSFET P-CH 60V 30A

    Harris Corporation

    1,100
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    HUF7554S3S

    HUF7554S3S

    MOSFET 80V 75A

    Harris Corporation

    839
    RFQ

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FDS6986AS

    FDS6986AS

    MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

    onsemi

    7,335
    RFQ
    FDS6986AS

    Tabla de datos

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.5A, 7.9A 29mOhm @ 6.5A, 10V 3V @ 250µA 17nC @ 10V 720pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    BSO203PHXUMA1

    BSO203PHXUMA1

    MOSFET 2P-CH 20V 7A 8DSO

    Infineon Technologies

    4,745
    RFQ
    BSO203PHXUMA1

    Tabla de datos

    OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 7A 21mOhm @ 8.2A, 4.5V 1.2V @ 100µA 39nC @ 4.5V 3750pF @ 15V 1.6W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    EFC8811R-TF

    EFC8811R-TF

    MOSFET 2N-CH 6CSP

    onsemi

    13,124
    RFQ
    EFC8811R-TF

    Tabla de datos

    - 6-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive - - - - - - 2.5W 150°C (TJ) - - Surface Mount 6-CSP (1.77x3.54)
    FDMC8032L

    FDMC8032L

    MOSFET 2N-CH 40V 7A 8PWR33

    onsemi

    2,444
    RFQ
    FDMC8032L

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 7A 20mOhm @ 7A, 10V 3V @ 250µA 11nC @ 10V 720pF @ 20V 1.9W -55°C ~ 150°C (TJ) - - Surface Mount 8-Power33 (3x3)
    AON6994

    AON6994

    MOSFET 2N-CH 30V 19A/26A 8DFN

    Alpha & Omega Semiconductor Inc.

    2,706
    RFQ
    AON6994

    Tabla de datos

    - 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 19A, 26A 5.2mOhm @ 20A, 10V 2.2V @ 250µA 13nC @ 10V 820pF @ 15V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
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