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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

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    制造商 Serie Paquete/Caja Embalaje Estado del producto Tipo de diodo Tecnología Voltaje: pico inverso (máx.) Corriente: rectificada promedio (Io) Voltaje: directo (Vf) (máx.) a If Corriente: fuga inversa a Vr Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete














































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tipo de diodo Tecnología Voltaje: pico inverso (máx.) Corriente: rectificada promedio (Io) Voltaje: directo (Vf) (máx.) a If Corriente: fuga inversa a Vr Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    KBPC3504WP

    KBPC3504WP

    BRIDGE RECT 1P 400V 35A KBPC WP

    Diotec Semiconductor

    131
    RFQ
    KBPC3504WP

    Tabla de datos

    - 4-Square, KBPC WP Bulk Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 10 µA @ 400 V -50°C ~ 150°C (TJ) - - Through Hole KBPC WP
    TS15PL06G

    TS15PL06G

    BRIDGE RECT 1P 800V 15A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS15PL06G

    Tabla de datos

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 15 A 930 mV @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    KBPC2504T

    KBPC2504T

    BRIDGE RECT 1PHASE 400V 25A KBPC

    GeneSiC Semiconductor

    681
    RFQ
    KBPC2504T

    Tabla de datos

    - 4-Square, KBPC-T Bulk Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - QC Terminal KBPC
    KBPC2506T

    KBPC2506T

    BRIDGE RECT 1PHASE 600V 25A KBPC

    GeneSiC Semiconductor

    154
    RFQ
    KBPC2506T

    Tabla de datos

    - 4-Square, KBPC-T Bulk Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - QC Terminal KBPC
    GBU1508LL_T0_00601

    GBU1508LL_T0_00601

    BRIDGE RECT 1P 800V 15A GBU-2

    Panjit International Inc.

    2,000
    RFQ
    GBU1508LL_T0_00601

    Tabla de datos

    - 4-SIP, GBU Tube Active Single Phase Standard 800 V 15 A 950 mV @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU-2
    DFB2520

    DFB2520

    BRIDGE RECT 1P 200V 25A TS-6P

    onsemi

    1,200
    RFQ
    DFB2520

    Tabla de datos

    - 4-SIP, TS-6P Tube Active Single Phase Standard 200 V 25 A 1.1 V @ 25 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    TS15PL06GH

    TS15PL06GH

    BRIDGE RECT 1P 800V 15A TS-6P

    Taiwan Semiconductor Corporation

    1,200
    RFQ
    TS15PL06GH

    Tabla de datos

    - 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 15 A 930 mV @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
    KBPC10/15/2516FP

    KBPC10/15/2516FP

    BRIDGE RECT 1P 1.6KV 25A KBPC FP

    Diotec Semiconductor

    233
    RFQ
    KBPC10/15/2516FP

    Tabla de datos

    - 4-Square, KBPC FP Bulk Active Single Phase Standard 1.6 kV 25 A 1.2 V @ 12.5 A 10 µA @ 1600 V -50°C ~ 150°C (TJ) - - Chassis Mount KBPC FP
    DFB2510

    DFB2510

    BRIDGE RECT 1P 100V 25A TS-6P

    onsemi

    1,194
    RFQ
    DFB2510

    Tabla de datos

    - 4-SIP, TS-6P Tube Active Single Phase Standard 100 V 25 A 1.1 V @ 25 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
    KBPC3512WP

    KBPC3512WP

    BRIDGE RECT 1P 1.2KV 35A KBPC WP

    Diotec Semiconductor

    155
    RFQ
    KBPC3512WP

    Tabla de datos

    - 4-Square, KBPC WP Bulk Active Single Phase Standard 1.2 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1200 V -50°C ~ 150°C (TJ) - - Through Hole KBPC WP
    GBPC3506M

    GBPC3506M

    BRIDGE RECT 1P 600V 35A GBPC-M

    Taiwan Semiconductor Corporation

    200
    RFQ
    GBPC3506M

    Tabla de datos

    GBPC35 4-Square, GBPC-M Tray Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Chassis Mount GBPC-M
    GBPC3508M

    GBPC3508M

    BRIDGE RECT 1P 800V 35A GBPC-M

    Taiwan Semiconductor Corporation

    200
    RFQ
    GBPC3508M

    Tabla de datos

    GBPC35 4-Square, GBPC-M Tray Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Chassis Mount GBPC-M
    GBPC3506

    GBPC3506

    BRIDGE RECT 1PHASE 600V 35A GBPC

    Taiwan Semiconductor Corporation

    200
    RFQ
    GBPC3506

    Tabla de datos

    GBPC35 4-Square, GBPC Tray Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Chassis Mount GBPC
    GBPC3506W

    GBPC3506W

    BRIDGE RECT 1P 600V 35A GBPC-W

    Taiwan Semiconductor Corporation

    193
    RFQ
    GBPC3506W

    Tabla de datos

    GBPC35 4-Square, GBPC-W Tray Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    GBPC3504M

    GBPC3504M

    BRIDGE RECT 1P 400V 35A GBPC-M

    Taiwan Semiconductor Corporation

    191
    RFQ
    GBPC3504M

    Tabla de datos

    GBPC35 4-Square, GBPC-M Tray Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Chassis Mount GBPC-M
    GBPC3510M

    GBPC3510M

    BRIDGE RECT 1P 1KV 35A GBPC-M

    Taiwan Semiconductor Corporation

    188
    RFQ
    GBPC3510M

    Tabla de datos

    GBPC35 4-Square, GBPC-M Tray Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Chassis Mount GBPC-M
    GBPC3504W

    GBPC3504W

    BRIDGE RECT 1P 400V 35A GBPC-W

    Taiwan Semiconductor Corporation

    173
    RFQ
    GBPC3504W

    Tabla de datos

    GBPC35 4-Square, GBPC-W Tray Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    GBPC3510

    GBPC3510

    BRIDGE RECT 1PHASE 1KV 35A GBPC

    Taiwan Semiconductor Corporation

    144
    RFQ
    GBPC3510

    Tabla de datos

    GBPC35 4-Square, GBPC Tray Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Chassis Mount GBPC
    GBPC3510W

    GBPC3510W

    BRIDGE RECT 1P 1KV 35A GBPC-W

    Taiwan Semiconductor Corporation

    112
    RFQ
    GBPC3510W

    Tabla de datos

    GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    GBU15L05

    GBU15L05

    BRIDGE RECT 1PHASE 600V 15A GBU

    Taiwan Semiconductor Corporation

    1,354
    RFQ
    GBU15L05

    Tabla de datos

    - 4-SIP, GBU Tube Active Single Phase Standard 600 V 15 A 900 mV @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
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