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    制造商 Serie Paquete/Caja Embalaje Estado del producto Tipo de diodo Tecnología Voltaje: pico inverso (máx.) Corriente: rectificada promedio (Io) Voltaje: directo (Vf) (máx.) a If Corriente: fuga inversa a Vr Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete














































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tipo de diodo Tecnología Voltaje: pico inverso (máx.) Corriente: rectificada promedio (Io) Voltaje: directo (Vf) (máx.) a If Corriente: fuga inversa a Vr Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    GBU6M-E3/51

    GBU6M-E3/51

    BRIDGE RECT 1PHASE 1KV 3.8A GBU

    Vishay General Semiconductor - Diodes Division

    965
    RFQ
    GBU6M-E3/51

    Tabla de datos

    - 4-SIP, GBU Bulk Active Single Phase Standard 1 kV 3.8 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU6K-E3/45

    GBU6K-E3/45

    BRIDGE RECT 1PHASE 800V 3.8A GBU

    Vishay General Semiconductor - Diodes Division

    739
    RFQ
    GBU6K-E3/45

    Tabla de datos

    - 4-SIP, GBU Tube Active Single Phase Standard 800 V 3.8 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBU6K-E3/51

    GBU6K-E3/51

    BRIDGE RECT 1PHASE 800V 3.8A GBU

    Vishay General Semiconductor - Diodes Division

    613
    RFQ
    GBU6K-E3/51

    Tabla de datos

    - 4-SIP, GBU Bulk Active Single Phase Standard 800 V 3.8 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    BU1206-E3/45

    BU1206-E3/45

    BRIDGE RECT 1PHASE 600V 3.4A BU

    Vishay General Semiconductor - Diodes Division

    111
    RFQ
    BU1206-E3/45

    Tabla de datos

    - 4-SIP, BU Tube Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    VS-2KBP005

    VS-2KBP005

    BRIDGE RECT 1PHASE 50V 2A D-44

    Vishay General Semiconductor - Diodes Division

    360
    RFQ
    VS-2KBP005

    Tabla de datos

    VS-2KBP 4-SIP, D-44 Tube Active Single Phase Standard 50 V 2 A 1 V @ 1 A 10 µA @ 50 V -40°C ~ 150°C (TJ) - - Through Hole D-44
    BU1006A-M3/45

    BU1006A-M3/45

    BRIDGE RECT 1PHASE 600V 10A BU

    Vishay General Semiconductor - Diodes Division

    796
    RFQ
    BU1006A-M3/45

    Tabla de datos

    - 4-SIP, BU Tube Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    VS-2KBB40R

    VS-2KBB40R

    BRIDGE RECT 1P 400V 1.9A 2KBB

    Vishay General Semiconductor - Diodes Division

    259
    RFQ
    VS-2KBB40R

    Tabla de datos

    - 4-SIP, 2KBB Bulk Active Single Phase Standard 400 V 1.9 A 1.1 V @ 1.9 A 10 µA @ 400 V -40°C ~ 150°C (TJ) - - Through Hole 2KBB
    GBJ2010-BP

    GBJ2010-BP

    BRIDGE RECT 1PHASE 1KV 20A GBJ

    Micro Commercial Co

    2,640
    RFQ
    GBJ2010-BP

    Tabla de datos

    - 4-SIP, GBJ Bulk Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ2006-BP

    GBJ2006-BP

    BRIDGE RECT 1PHASE 600V 20A GBJ

    Micro Commercial Co

    1,418
    RFQ
    GBJ2006-BP

    Tabla de datos

    - 4-SIP, GBJ Bulk Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    VS-KBPC108

    VS-KBPC108

    BRIDGE RECT 1PHASE 800V 3A KBPC1

    Vishay General Semiconductor - Diodes Division

    226
    RFQ
    VS-KBPC108

    Tabla de datos

    VS-KBPC1 4-Square, KBPC-1 Bulk Active Single Phase Standard 800 V 3 A 1.1 V @ 1.5 A 10 µA @ 800 V -40°C ~ 150°C (TJ) - - Through Hole KBPC1
    GSIB620-E3/45

    GSIB620-E3/45

    BRIDGE RECT 1P 200V 2.8A GSIB-5S

    Vishay General Semiconductor - Diodes Division

    234
    RFQ
    GSIB620-E3/45

    Tabla de datos

    - 4-SIP, GSIB-5S Tube Active Single Phase Standard 200 V 2.8 A 950 mV @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
    GBU8KS

    GBU8KS

    BRIDGE RECT 1PHASE 800V 8A GBU

    onsemi

    1,548
    RFQ
    GBU8KS

    Tabla de datos

    - 4-SIP, GBU Tube Active Single Phase Standard 800 V 8 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GSIB1540-E3/45

    GSIB1540-E3/45

    BRIDGE RECT 1P 400V 3.5A GSIB-5S

    Vishay General Semiconductor - Diodes Division

    317
    RFQ
    GSIB1540-E3/45

    Tabla de datos

    - 4-SIP, GSIB-5S Tube Active Single Phase Standard 400 V 3.5 A 950 mV @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
    GBJ3508L-BP

    GBJ3508L-BP

    BRIDGE RECT 1PHASE 800V 35A GBJ

    Micro Commercial Co

    1,462
    RFQ
    GBJ3508L-BP

    Tabla de datos

    GBJ 4-SIP, GBJ Tube Active Single Phase Standard 800 V 35 A 950 mV @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ3502-BP

    GBJ3502-BP

    BRIDGE RECT 1PHASE 200V 35A GBJ

    Micro Commercial Co

    1,300
    RFQ
    GBJ3502-BP

    Tabla de datos

    - 4-SIP, GBJ Tube Not For New Designs Single Phase Standard 200 V 35 A 1.05 V @ 17.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GSIB15A80-E3/45

    GSIB15A80-E3/45

    BRIDGE RECT 1P 800V 3.5A GSIB-5S

    Vishay General Semiconductor - Diodes Division

    1,092
    RFQ
    GSIB15A80-E3/45

    Tabla de datos

    - 4-SIP, GSIB-5S Tube Active Single Phase Standard 800 V 3.5 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
    GSIB1580N-M3/45

    GSIB1580N-M3/45

    BRIDGE RECT 1P 800V 15A GSIB-5S

    Vishay General Semiconductor - Diodes Division

    738
    RFQ
    GSIB1580N-M3/45

    Tabla de datos

    - 4-SIP, GSIB-5S Tube Active Single Phase Standard 800 V 15 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
    GBJ2508L-BP

    GBJ2508L-BP

    BRIDGE RECT 1PHASE 800V 25A GBJ

    Micro Commercial Co

    1,341
    RFQ
    GBJ2508L-BP

    Tabla de datos

    GBJ 4-SIP, GBJ Tape & Reel (TR) Active Single Phase Standard 800 V 25 A 920 mV @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    BU2006-E3/45

    BU2006-E3/45

    BRIDGE RECT 1PHASE 600V 3.5A BU

    Vishay General Semiconductor - Diodes Division

    790
    RFQ
    BU2006-E3/45

    Tabla de datos

    - 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.5 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
    BU2008-E3/45

    BU2008-E3/45

    BRIDGE RECT 1PHASE 800V 3.5A BU

    Vishay General Semiconductor - Diodes Division

    308
    RFQ
    BU2008-E3/45

    Tabla de datos

    - 4-SIP, BU Tube Active Single Phase Standard 800 V 3.5 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
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