Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo de diodo | Tecnología | Voltaje: pico inverso (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Corriente: fuga inversa a Vr | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-2KBB80RECTIFIER BRIDGE 800V 1.9A D-37 Vishay General Semiconductor - Diodes Division |
0 |
|
- |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - |
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GBU4A-E3/45BRIDGE RECT 1PHASE 50V 3A GBU Vishay General Semiconductor - Diodes Division |
0 |
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![]() Tabla de datos |
- | 4-SIP, GBU | Tube | Active | Single Phase | Standard | 50 V | 3 A | 1 V @ 4 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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GBU4B-E3/45BRIDGE RECT 1PHASE 100V 3A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Tube | Active | Single Phase | Standard | 100 V | 3 A | 1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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GBU4M-E3/45BRIDGE RECT 1PHASE 1KV 3A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Tube | Active | Single Phase | Standard | 1 kV | 3 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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G5SBA20-M3/51BRIDGE RECT 1PHASE 200V 2.8A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Tray | Active | Single Phase | Standard | 200 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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G5SBA60-M3/51BRIDGE RECT 1PHASE 600V 2.8A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Tray | Active | Single Phase | Standard | 600 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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G5SBA80-M3/51BRIDGE RECT 1PHASE 800V 2.8A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Tray | Active | Single Phase | Standard | 800 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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GBU4D-E3/51BRIDGE RECT 1PHASE 200V 3A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Bulk | Active | Single Phase | Standard | 200 V | 3 A | 1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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G5SBA20-M3/45BRIDGE RECT 1PHASE 200V 2.8A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Tube | Active | Single Phase | Standard | 200 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |
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G5SBA60-M3/45BRIDGE RECT 1PHASE 600V 2.8A GBU Vishay General Semiconductor - Diodes Division |
0 |
|
![]() Tabla de datos |
- | 4-SIP, GBU | Tube | Active | Single Phase | Standard | 600 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBU |