Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo de diodo | Tecnología | Voltaje: pico inverso (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Corriente: fuga inversa a Vr | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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GBL02-E3/45BRIDGE RECT 1PHASE 200V 3A GBL Vishay General Semiconductor - Diodes Division |
346 |
|
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- | 4-SIP, GBL | Tube | Discontinued at Digi-Key | Single Phase | Standard | 200 V | 3 A | 1.1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBL |
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GBL02-E3/51BRIDGE RECT 1PHASE 200V 3A GBL Vishay General Semiconductor - Diodes Division |
126 |
|
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- | 4-SIP, GBL | Bulk | Discontinued at Digi-Key | Single Phase | Standard | 200 V | 3 A | 1.1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBL |
|
BU10105S-E3/45BRIDGE RECT 1P 1KV 3.2A BU-5S Vishay General Semiconductor - Diodes Division |
247 |
|
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- | 4-SIP, BU-5S | Bulk | Obsolete | Single Phase | Standard | 1 kV | 3.2 A | 1.05 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU-5S |
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VS-131MT180CBRIDGE RECT 3PHASE 1.8KV 218A Vishay General Semiconductor - Diodes Division |
32 |
|
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- | Module | Box | Active | Three Phase | Standard | 1.8 kV | 218 A | 2.05 V @ 300 A | 12 mA @ 1800 V | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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VS-301MT180CBRIDGE RECT 3PHASE 1.8KV 300A Vishay General Semiconductor - Diodes Division |
13 |
|
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- | Module | Box | Active | Three Phase | Standard | 1.8 kV | 300 A | 1.7 V @ 300 A | 12 mA @ 1800 V | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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B80C800G-E4/51BRIDGE RECT 1P 125V 900MA WOG Vishay General Semiconductor - Diodes Division |
861 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 125 V | 900 mA | 1 V @ 900 mA | 10 µA @ 125 V | -40°C ~ 125°C (TJ) | - | - | Through Hole | WOG |
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B380C1000G-E4/51BRIDGE RECT 1PHASE 600V 1A WOG Vishay General Semiconductor - Diodes Division |
682 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 600 V | 1 A | 1 V @ 1 A | 10 µA @ 600 V | -40°C ~ 125°C (TJ) | - | - | Through Hole | WOG |
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W10G-E4/51BRIDGE RECT 1PHASE 1KV 1.5A WOG Vishay General Semiconductor - Diodes Division |
540 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 1 kV | 1.5 A | 1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | WOG |
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W005G-E4/51BRIDGE RECT 1PHASE 50V 1.5A WOG Vishay General Semiconductor - Diodes Division |
218 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 50 V | 1.5 A | 1 V @ 1 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | WOG |
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VS-KBPC604PBFBRIDGE RECT 1PHASE 400V 6A D-72 Vishay General Semiconductor - Diodes Division |
93 |
|
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VS-KBPC6 | 4-Square, D-72 | Bulk | Active | Single Phase | Standard | 400 V | 6 A | 1.2 V @ 3 A | 10 µA @ 400 V | -40°C ~ 150°C (TJ) | - | - | Through Hole | D-72 |