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    制造商 Serie Paquete/Caja Embalaje Estado del producto Tipo de diodo Tecnología Voltaje: pico inverso (máx.) Corriente: rectificada promedio (Io) Voltaje: directo (Vf) (máx.) a If Corriente: fuga inversa a Vr Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete














































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tipo de diodo Tecnología Voltaje: pico inverso (máx.) Corriente: rectificada promedio (Io) Voltaje: directo (Vf) (máx.) a If Corriente: fuga inversa a Vr Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    GBPC2508W

    GBPC2508W

    BRIDGE RECT 1P 800V 25A GBPC-W

    onsemi

    78
    RFQ
    GBPC2508W

    Tabla de datos

    - 4-Square, GBPC-W Bulk Active Single Phase Standard 800 V 25 A 1.1 V @ 1.2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    VS-GBPC2502W

    VS-GBPC2502W

    BRIDGE RECT 1P 200V 25A GBPC-W

    Vishay General Semiconductor - Diodes Division

    100
    RFQ
    VS-GBPC2502W

    Tabla de datos

    VS-GBPC 4-Square, GBPC-W Bulk Active Single Phase Standard 200 V 25 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    VS-GBPC2506W

    VS-GBPC2506W

    BRIDGE RECT 1P 600V 25A GBPC-W

    Vishay General Semiconductor - Diodes Division

    80
    RFQ
    VS-GBPC2506W

    Tabla de datos

    VS-GBPC 4-Square, GBPC-W Bulk Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 2 mA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    VS-GBPC2508A

    VS-GBPC2508A

    BRIDGE RECT 1P 800V 25A GBPC-A

    Vishay General Semiconductor - Diodes Division

    75
    RFQ
    VS-GBPC2508A

    Tabla de datos

    VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 800 V 25 A - 2 mA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
    VS-GBPC3502W

    VS-GBPC3502W

    BRIDGE RECT 1P 200V 35A GBPC-W

    Vishay General Semiconductor - Diodes Division

    100
    RFQ
    VS-GBPC3502W

    Tabla de datos

    VS-GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 200 V 35 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    VS-GBPC2508W

    VS-GBPC2508W

    BRIDGE RECT 1P 800V 25A GBPC-W

    Vishay General Semiconductor - Diodes Division

    100
    RFQ
    VS-GBPC2508W

    Tabla de datos

    VS-GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 2 mA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    VS-GBPC2512A

    VS-GBPC2512A

    BRIDGE RECT 1P 1.2KV 25A GBPC-A

    Vishay General Semiconductor - Diodes Division

    68
    RFQ
    VS-GBPC2512A

    Tabla de datos

    VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 1.2 kV 25 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
    VS-GBPC3506W

    VS-GBPC3506W

    BRIDGE RECT 1P 600V 35A GBPC-W

    Vishay General Semiconductor - Diodes Division

    44
    RFQ
    VS-GBPC3506W

    Tabla de datos

    VS-GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 600 V 35 A - 2 mA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    VS-GBPC3508A

    VS-GBPC3508A

    BRIDGE RECT 1P 800V 35A GBPC-A

    Vishay General Semiconductor - Diodes Division

    70
    RFQ
    VS-GBPC3508A

    Tabla de datos

    VS-GBPC 4-Square, GBPC-A Bulk Active Single Phase Standard 800 V 35 A - 2 mA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
    GBPC2501W

    GBPC2501W

    BRIDGE RECT 1P 100V 25A GBPC-W

    onsemi

    49
    RFQ
    GBPC2501W

    Tabla de datos

    - 4-Square, GBPC-W Tray Active Single Phase Standard 100 V 25 A 1.1 V @ 7.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    GBPC2510W

    GBPC2510W

    BRIDGE RECT 1P 1KV 25A GBPC-W

    onsemi

    84
    RFQ
    GBPC2510W

    Tabla de datos

    - 4-Square, GBPC-W Bulk Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
    KBPC1010W-G

    KBPC1010W-G

    BRIDGE RECT 1P 1KV 10A KBPC-W

    Comchip Technology

    96
    RFQ
    KBPC1010W-G

    Tabla de datos

    - 4-Square, KBPC-W Bulk Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole KBPC-W
    GBO25-12NO1

    GBO25-12NO1

    BRIDGE RECT 1P 1.2KV 25A 4-SIP

    IXYS

    21
    RFQ
    GBO25-12NO1

    Tabla de datos

    - 4-SIP, GBO Tube Active Single Phase Standard 1.2 kV 25 A 1.1 V @ 12.5 A 50 µA @ 1200 V -40°C ~ 150°C (TJ) - - Through Hole 4-SIP
    GBO25-16NO1

    GBO25-16NO1

    BRIDGE RECT 1P 1.6KV 25A 4-SIP

    IXYS

    17
    RFQ
    GBO25-16NO1

    Tabla de datos

    - 4-SIP, GBO Tube Active Single Phase Standard 1.6 kV 25 A 1.1 V @ 12.5 A 50 µA @ 1600 V -40°C ~ 150°C (TJ) - - Through Hole 4-SIP
    VS-26MB160A

    VS-26MB160A

    BRIDGE RECT 1P 1.6KV 25A D-34

    Vishay General Semiconductor - Diodes Division

    6
    RFQ
    VS-26MB160A

    Tabla de datos

    - 4-Square, D-34 Bulk Active Single Phase Standard 1.6 kV 25 A - 10 µA @ 1600 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
    VBO22-12NO8

    VBO22-12NO8

    BRIDGE RECT 1P 1.2KV 21A FO-B

    IXYS

    34
    RFQ
    VBO22-12NO8

    Tabla de datos

    - 4-Square, FO-B Box Active Single Phase Standard 1.2 kV 21 A 2.2 V @ 150 A 300 µA @ 1200 V -40°C ~ 150°C (TJ) - - QC Terminal FO-B
    VS-26MB140A

    VS-26MB140A

    BRIDGE RECT 1P 1.4KV 25A D-34

    Vishay General Semiconductor - Diodes Division

    59
    RFQ
    VS-26MB140A

    Tabla de datos

    - 4-Square, D-34 Bulk Active Single Phase Standard 1.4 kV 25 A - 10 µA @ 1400 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
    VS-26MT20

    VS-26MT20

    BRIDGE RECT 3PHASE 200V 25A D-63

    Vishay General Semiconductor - Diodes Division

    13
    RFQ
    VS-26MT20

    Tabla de datos

    - 5-Square, D-63 Bulk Active Three Phase Standard 200 V 25 A - 100 µA @ 200 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
    VBO36-18NO8

    VBO36-18NO8

    BRIDGE RECT 1P 1.8KV 30A FO-B

    IXYS

    49
    RFQ
    VBO36-18NO8

    Tabla de datos

    - 4-Square, FO-B Box Active Single Phase Standard 1.8 kV 30 A 1.14 V @ 30 A 40 µA @ 1800 V -40°C ~ 150°C (TJ) - - QC Terminal FO-B
    VUO68-08NO7

    VUO68-08NO7

    BRIDGE RECT 3P 800V 68A ECO-PAC1

    IXYS

    22
    RFQ
    VUO68-08NO7

    Tabla de datos

    - ECO-PAC1 Box Active Three Phase Standard 800 V 68 A 1.5 V @ 60 A 40 µA @ 800 V -40°C ~ 150°C (TJ) - - Chassis Mount ECO-PAC1
    Total 6964 Record«Prev1... 99100101102103104105106...349Next»
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